Two-dimensional MoO3 via a top-down chemical thinning route

F Rahman; T Ahmed; S Walia; E Mayes; S Sriram; M Bhaskaran; S Balendhran

Journal article

Two-dimensional MoO3 via a top-down chemical thinning route

F Rahman, T Ahmed, S Walia, E Mayes, S Sriram, M Bhaskaran, S Balendhran

2d Materials | Published : 2017

DOI: 10.1088/2053-1583/aa79d5

Abstract

Two-dimensional MoO3 is a versatile planar material, whose properties can be readily tuned, rendering it anywhere from a wide bandgap semiconductor to semi-metallic. This makes it a desirable candidate for a wide range of applications. However, to utilise its full potential, a repeatable process to produce high-quality two-dimensional (2D) crystals is yet to be reported. Here, we report a wet chemical etching process to controllably thin down bulk crystals of MoO3. This process does not result in any structural or compositional changes, while retaining the desirable intrinsic electronic properties of the material. Field effect transistors based on post-etched crystals exhibit switching ratio..

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University of Melbourne Researchers

Shiva Balendhran Author

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Grants

Awarded by Australian Research Council

Funding Acknowledgements

The authors acknowledge support from the Australian Research Council (ARC) with project and personnel support through DE150100909 (SB), DE160100023 (MB), and DP140100170 (MB) and equipment funding through LE110100223 and LE150100001. The authors also acknowledge the facilities and technical assistance of the Micro Nano Research Facility and RMIT Microscopy and Microanalysis Facility.